Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy

A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the t...

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Detalles Bibliográficos
Autor principal: Ramírez-Porras, A.
Formato: Online
Idioma:spa
Publicado: Universidad de Costa Rica 2011
Acceso en línea:https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691

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