Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy

A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the t...

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Autor principal: Ramírez-Porras, A.
Formato: Online
Idioma:spa
Publicado: Universidad de Costa Rica 2011
Acceso en línea:https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691
id CIETEC2691
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spelling CIETEC26912024-09-13T19:38:11Z Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy Ramírez-Porras, A. A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites in the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band-to-band recombination processes. In this study, a nanometer size determination of such proposed structures was perfomed by use of X-Ray Diffractometry and Raman Spectroscopy. The results suggest a consistency between the so called Quantum Confined Model and the experimental results. Universidad de Costa Rica 2011-02-07 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Article application/pdf https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691 Revista de Ciencia y Tecnología; Vol. 21 No. 1 y 2 (1997) Revista de Ciencia y Tecnología; Vol. 21 Núm. 1 y 2 (1997) 2215-5708 0378-052X spa https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691/2640 Derechos de autor 2014 Revista de Ciencia y Tecnología
institution Universidad de Costa Rica
collection Revista de Ciencia y Tecnología
language spa
format Online
author Ramírez-Porras, A.
spellingShingle Ramírez-Porras, A.
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
author_facet Ramírez-Porras, A.
author_sort Ramírez-Porras, A.
description A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites in the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band-to-band recombination processes. In this study, a nanometer size determination of such proposed structures was perfomed by use of X-Ray Diffractometry and Raman Spectroscopy. The results suggest a consistency between the so called Quantum Confined Model and the experimental results.
title Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
title_short Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
title_full Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
title_fullStr Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
title_full_unstemmed Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
title_sort nanostructure size determination in n+- type porous silicon by x-rya diffractometry and raman spectroscopy
publisher Universidad de Costa Rica
publishDate 2011
url https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691
work_keys_str_mv AT ramirezporrasa nanostructuresizedeterminationinntypeporoussiliconbyxryadiffractometryandramanspectroscopy
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