Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy
A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the t...
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Universidad de Costa Rica
2011
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CIETEC26912024-09-13T19:38:11Z Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy Ramírez-Porras, A. A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites in the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band-to-band recombination processes. In this study, a nanometer size determination of such proposed structures was perfomed by use of X-Ray Diffractometry and Raman Spectroscopy. The results suggest a consistency between the so called Quantum Confined Model and the experimental results. Universidad de Costa Rica 2011-02-07 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Article application/pdf https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691 Revista de Ciencia y Tecnología; Vol. 21 No. 1 y 2 (1997) Revista de Ciencia y Tecnología; Vol. 21 Núm. 1 y 2 (1997) 2215-5708 0378-052X spa https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691/2640 Derechos de autor 2014 Revista de Ciencia y Tecnología |
institution |
Universidad de Costa Rica |
collection |
Revista de Ciencia y Tecnología |
language |
spa |
format |
Online |
author |
Ramírez-Porras, A. |
spellingShingle |
Ramírez-Porras, A. Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
author_facet |
Ramírez-Porras, A. |
author_sort |
Ramírez-Porras, A. |
description |
A series of porous silicon surfaces were obstained after different exposition times of electrochemiscal etching on crystaline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites in the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band-to-band recombination processes. In this study, a nanometer size determination of such proposed structures was perfomed by use of X-Ray Diffractometry and Raman Spectroscopy. The results suggest a consistency between the so called Quantum Confined Model and the experimental results. |
title |
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
title_short |
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
title_full |
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
title_fullStr |
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
title_full_unstemmed |
Nanostructure size determination in N+- type porous silicon bY X-Rya diffractometry and Raman Spectroscopy |
title_sort |
nanostructure size determination in n+- type porous silicon by x-rya diffractometry and raman spectroscopy |
publisher |
Universidad de Costa Rica |
publishDate |
2011 |
url |
https://revistas.ucr.ac.cr/index.php/cienciaytecnologia/article/view/2691 |
work_keys_str_mv |
AT ramirezporrasa nanostructuresizedeterminationinntypeporoussiliconbyxryadiffractometryandramanspectroscopy |
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1810115450419281920 |