Quantum tunneling in magnetic tunneling junctions

This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth...

Descripción completa

Detalles Bibliográficos
Autores principales:	Cruz de Gracia, Evgeni, Strazzabosco Dorneles, Lucio, Schelp, Luiz Fernando, Ribeiro Teixiera, Sérgio, Baibich, Mario Norberto
Formato:	Online
Idioma:	spa
Publicado:	Universidad Tecnológica de Panamá, Panamá 2012
Acceso en línea:	https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96

id	IDTEC96
record_format	ojs
spelling	IDTEC962019-04-26T15:07:33Z Quantum tunneling in magnetic tunneling junctions Cruz de Gracia, Evgeni Strazzabosco Dorneles, Lucio Schelp, Luiz Fernando Ribeiro Teixiera, Sérgio Baibich, Mario Norberto This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves. Universidad Tecnológica de Panamá, Panamá 2012-06-29 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion application/pdf text/html https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96 I+D Tecnológico; Vol. 8 Núm. 1 (2012): Revista I+D Tecnológico; 26-32 2219-6714 1680-8894 spa https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/pdf https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96/html Derechos de autor 2016 Evgeni Cruz de Gracia, Lucio Strazzabosco Dorneles, Luiz Fernando Schelp, Sérgio Ribeiro Teixiera, Mario Norberto Baibich
institution	Universidad Tecnológica de Panamá
collection	I+D Tecnológico
language	spa
format	Online
author	Cruz de Gracia, Evgeni Strazzabosco Dorneles, Lucio Schelp, Luiz Fernando Ribeiro Teixiera, Sérgio Baibich, Mario Norberto
spellingShingle	Cruz de Gracia, Evgeni Strazzabosco Dorneles, Lucio Schelp, Luiz Fernando Ribeiro Teixiera, Sérgio Baibich, Mario Norberto Quantum tunneling in magnetic tunneling junctions
author_facet	Cruz de Gracia, Evgeni Strazzabosco Dorneles, Lucio Schelp, Luiz Fernando Ribeiro Teixiera, Sérgio Baibich, Mario Norberto
author_sort	Cruz de Gracia, Evgeni
description	This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism. The exponential growth of the effective area-resistance product with the effective barrier thickness, and the concentration of the tunnel current in small areas of the junctions, were identified by fitting room temperature I-V curves, for each individual sample, with either Simmons’ [J. Appl. Phys. 34, 1793 (1963); 35, 2655 (1964); 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution and showing quantum tunneling as the charge transport mechanism. This mechanism, is also, verified through I-T curves.
title	Quantum tunneling in magnetic tunneling junctions
title_short	Quantum tunneling in magnetic tunneling junctions
title_full	Quantum tunneling in magnetic tunneling junctions
title_fullStr	Quantum tunneling in magnetic tunneling junctions
title_full_unstemmed	Quantum tunneling in magnetic tunneling junctions
title_sort	quantum tunneling in magnetic tunneling junctions
publisher	Universidad Tecnológica de Panamá, Panamá
publishDate	2012
url	https://revistas.utp.ac.pa/index.php/id-tecnologico/article/view/96
work_keys_str_mv	AT cruzdegraciaevgeni quantumtunnelinginmagnetictunnelingjunctions AT strazzaboscodorneleslucio quantumtunnelinginmagnetictunnelingjunctions AT schelpluizfernando quantumtunnelinginmagnetictunnelingjunctions AT ribeiroteixierasergio quantumtunnelinginmagnetictunnelingjunctions AT baibichmarionorberto quantumtunnelinginmagnetictunnelingjunctions
_version_	1811817957267865600

Quantum tunneling in magnetic tunneling junctions

Ejemplares similares